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BLF6G27-135

NXP Semiconductors
Part Number BLF6G27-135
Manufacturer NXP Semiconductors
Description WiMAX power LDMOS transistor
Published Jun 18, 2010
Detailed Description BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 www.DataSheet4U.com Product data sheet ...
Datasheet PDF File BLF6G27-135 PDF File

BLF6G27-135
BLF6G27-135

Overview
BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev.
02 — 26 May 2008 www.
DataSheet4U.
com Product data sheet 1.
Product profile 1.
1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS PL(AV) (V) 32 (W) 20 PL(p) Gp (W) 200 16 ηD ACPR885k ACPR1980k (dBc) (dBc) −67[2] (dB) (%) 22.
5 −52[2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13).
PAR = 9.
7 dB at 0.
01 % probability on the CCDF.
Channel bandwidth is 1.
2288 MHz.
Measured within 30 kHz bandwidth.
1.
2 Features I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 to 13].
PAR = 9.
7 dB at 0.
01 % probability on the CCDF.
Channel bandwidth is 1.
2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 20 W N Power gain = 16 dB N Drain efficiency = 22.
5 % N ACPR885k = −52.
0 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2500 MHz to 2700 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications I RF power amplifiers for base stations and multicarrier applications in the 2500 MHz to 2700 MHz frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor www.
DataSheet4U.
com 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G27-135 (SOT502A) 1 1 3 2 2 3 sym112 BLF6G27LS-135 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange.
3.
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