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BLF6G38S-25

NXP Semiconductors
Part Number BLF6G38S-25
Manufacturer NXP Semiconductors
Description WiMAX power LDMOS transistor
Published Jun 18, 2010
Detailed Description BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 www.DataSheet4U.com Product data sheet...
Datasheet PDF File BLF6G38S-25 PDF File

BLF6G38S-25
BLF6G38S-25

Overview
BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev.
02 — 23 December 2008 www.
DataSheet4U.
com Product data sheet 1.
Product profile 1.
1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.
5 Gp (dB) 15 ηD (%) 24 ACPR885k ACPR1980k (dBc) −45[2] (dBc) −61[2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.
7 dB at 0.
01 % probability on the CCDF.
Channel bandwidth is 1.
2288 MHz.
Measured within 30 kHz bandwidth.
1.
2 Features I Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13].
PAR = 9.
7 dB at 0.
01 % probability on the CCDF.
Channel bandwidth is 1.
2288 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA: N Average output power = 4.
5 W N Power gain = 15 dB N Drain efficiency = 24 % N ACPR885k = −45 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3400 MHz to 3800 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications I RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor www.
DataSheet4U.
com 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF6G38-25 (SOT608A) 1 1 3 2 2 3 sym112 BLF6G38S-25 (SOT608B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange.
3.
Ordering information...


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