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BT1306-400D

NXP Semiconductors
Part Number BT1306-400D
Manufacturer NXP Semiconductors
Description Logic level triac
Published Jun 18, 2010
Detailed Description www.DataSheet4U.com BT1306-400D/600D Logic level triac Rev. 01 — 19 February 2004 M3D186 Product data 1. Product profi...
Datasheet PDF File BT1306-400D PDF File

BT1306-400D
BT1306-400D


Overview
www.
DataSheet4U.
com BT1306-400D/600D Logic level triac Rev.
01 — 19 February 2004 M3D186 Product data 1.
Product profile 1.
1 Description Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
1.
2 Features s Sensitive gate in all four quadrants s Low cost package.
1.
3 Applications s General purpose bidirectional switching s Solid state relays s Phase control applications s Low power AC fan speed controllers.
1.
4 Quick reference data s VDRM ≤ 600 V (BT1306-600D) s ITSM ≤ 8 A s VDRM ≤ 400 V (BT1306-400D) s IT(RMS) ≤ 0.
6 A.
2.
Pinning information Table 1: Pin 1 2 3 Pinning - SOT54 (TO-92), simplified outline and symbol Description main terminal 2 gate main terminal 1 1 1 2 3 2 MSB033 Simplified outline Symbol 3 MBL305 SOT54 (TO-92) Philips Semiconductors BT1306-400D/600D Logic level triac www.
DataSheet4U.
com 3.
Ordering information Table 2: Ordering information Package Name BT1306-600D BT1306-400D TO-92 TO-92 Description Plastic single-ended leaded (through hole) package; 3 leads Plastic single-ended leaded (through hole) package; 3 leads Version SOT54 SOT54 Type number 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDRM repetitive peak off-state voltage BT1306-600D BT1306-400D IT(RMS) ITSM on-state current (RMS value) full sine wave; Tlead ≤ 65 °C; Figure 1 and 2 non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; Figure 3 and 4 t = 20 ms t = 16.
7 ms I2t dIT/dt I2t for fusing repetitive rate of rise of on-state current after triggering t = 10 ms ITM = 1 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs T2+ G+ T2+ G− T2− G− T2− G+ IGM VGM PGM PG(AV) Tstg Tj gate current (peak value) gate voltage (peak value) gate power (peak value) average gate power storage temperature junction temperature t = 2 µs max; Tcase ≤ 80 °C t = 2 µs max −40 −40 50 50 50 10 1 5 5 0.
1 +150...


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