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IXFH52N30P

IXYS
Part Number IXFH52N30P
Manufacturer IXYS
Description PolarHT HiPerFET Power MOSFET
Published Jun 19, 2010
Detailed Description Advanced Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode...
Datasheet PDF File IXFH52N30P PDF File

IXFH52N30P
IXFH52N30P

Overview
Advanced Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 52N30P IXFV 52N30P IXFV 52N30PS VDSS ID25 trr RDS(on) www.
DataSheet4U.
com = 300 V = 52 A ≤ 66 mΩ ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transinet TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 52 150 52 30 1.
0 10 400 -55 .
.
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+150 150 -55 .
.
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+150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb TO-247...


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