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IXSH30N60B2D1

Part Number	IXSH30N60B2D1
Manufacturer	IXYS
Description	High Speed IGBT with Diode
Published	Jun 19, 2010
Detailed Description	www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST...
Datasheet	IXSH30N60B2D1 PDF File

Overview

www.
DataSheet4U.
com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE(sat) = 2.
5 V Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 10 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 48 30 28 90 ICM = 48 @ 0.
8 VCES 10 250 -55 .
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+150 150 -55 .
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+150 V V V V A A A A A TO-247 (IXSH) G C C (TAB) E TO-268 (IXST) G µ...

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IXSH30N60B2D1 High Speed IGBT with Diode - IXYS

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