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IXFX66N50Q2

Part Number	IXFX66N50Q2
Manufacturer	IXYS
Description	HiPerFET Power MOSFETs Q-Class
Published	Jun 20, 2010
Detailed Description	HiPerFET Power MOSFETs TM IXFK 66N50Q2 IXFX 66N50Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lo...
Datasheet	IXFX66N50Q2 PDF File

Overview

HiPerFET Power MOSFETs TM IXFK 66N50Q2 IXFX 66N50Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 66 264 66 75 4.
0 20 735 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ J V/ns W °C °C °C °C VDSS ID25 RDS(on) = = = www.
DataSheet4U.
com 500 V 66 A 80 mΩ trr ≤ 250 ns PLUS 247TM (IXFX) G D (TAB) D TO-264 AA (IXFK) G D S D (TAB) D = Drain TAB = Drain 0.
9/6 Nm/lb.
in.
6 10 g g G = Gate S = Source Features z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
500 2.
0 4.
5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z z z VGS = 10 V, ID = 0.
5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 80 m Ω Easy to mount Space savings High power density © 2004 IXYS All rights reserved DS98983A(7/04) IXFK 66N50Q2 IXFX 66N50Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
30 44 8400 VGS = 0 V, VDS = 25 V, f = 1 MHz 1290 310 32 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 1.
0 Ω (External), 16 60 10 200 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 47 98 0.
17 TO-264 0.
15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim.
A A1 A2 b b1 b2 C D E e ...

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