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HFS11N40

SemiHow
Part Number HFS11N40
Manufacturer SemiHow
Description 400V N-Channel MOSFET
Published Jun 21, 2010
Detailed Description www.DataSheet4U.com HFS11N40 Dec 2005 BVDSS = 400 V HFS11N40 400V N-Channel MOSFET FEATURES  Originative New Design...
Datasheet PDF File HFS11N40 PDF File

HFS11N40
HFS11N40

Overview
www.
DataSheet4U.
com HFS11N40 Dec 2005 BVDSS = 400 V HFS11N40 400V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
38 Ω (Typ.
) @VGS=10V  100% Avalanche Tested RDS(on) typ = 0.
38 Ω ID = 11.
4 A TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25℃ unless otherwise specified Parameter – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Value 400 11.
4* 7.
2* 45.
6* ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ 520 11.
4 14.
7 4.
5 50 0.
4 -55 to +150 300 Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient Parameter Typ.
--Max.
2.
5 62.
5 ℃/W Units ◎ SEMIHOW REV.
A0,Dec 2005 www.
DataSheet4U.
com HFS11N40 Electrical Characteristics TC=25 °C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 5.
7 A 2.
5 --0.
38 4.
5 0.
48 V Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 400 ------0.
41 ------1 10 100 -100 V V/℃ ㎂ ㎂ ㎁ ㎁ ΔBVDSS Breakdown Voltage Temperature Coefficient /Δ...


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