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APT11N80GC3

Advanced Power Technology
Part Number APT11N80GC3
Manufacturer Advanced Power Technology
Description Super Junction MOSFET
Published Jun 23, 2010
Detailed Description APT11N80GC3 www.DataSheet4U.com 800V 7.4A 0.500Ω Super Junction MOSFET TO-257 C O OLMOS Power Semiconductors • Ultra...
Datasheet PDF File APT11N80GC3 PDF File

APT11N80GC3
APT11N80GC3

Overview
APT11N80GC3 www.
DataSheet4U.
com 800V 7.
4A 0.
500Ω Super Junction MOSFET TO-257 C O OLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-257 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified.
APT11N80GC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 800 7.
4 22.
2 ±20 ±30 77 0.
62 -55 to 150 260 50 7.
4 0.
2 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperatu...


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