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IDTQS3306A

Part Number	IDTQS3306A
Manufacturer	Integrated Device Technology
Description	HIGH-SPEED CMOS DUAL BUS SWITCH
Published	Jun 23, 2010
Detailed Description	IDTQS3306A HIGH-SPEED CMOS DUAL BUS SWITCH WITH LOW ENABLES www.DataSheet4U.com INDUSTRIAL TEMPERATURE RANGE QUICKSWI...
Datasheet	IDTQS3306A PDF File

Overview

IDTQS3306A HIGH-SPEED CMOS DUAL BUS SWITCH WITH LOW ENABLES www.
DataSheet4U.
com INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH® PRODUCTS HIGH-SPEED CMOS DUAL BUS SWITCH WITH INDIVIDUAL ACTIVE LOW ENABLES FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc Very low ON Resistance (3Ω typical) Fast turn-on/turn-off time Available in 8-pin SOIC Package (S1) Undershoot clamp diodes on all switch and control inputs Zero propagation delay, zero added ground bounce IDTQS3306A DESCRIPTION: The QS3306A provides a set of two high-speed low resistance (3Ω typical) CMOS switches connecting inputs to outputs without propagation delay and without generating additional ground bounce noise.
Individual enables (OE) are used to turn on the switches.
The QS3306A is ideal for signal and control switching since the device adds no noise, ground bounce, propagation delay, or significant power consumption to the system.
The QS3306A can also be used for analog switching applications such as video.
The QS3306A is characterized for operation at -40°C to +85°C.
APPLICATIONS − − − − − − − − Line control Hot-swapping, hot-docking Voltage translation (5V to 3.
3V) Power conservation Capacitance reduction and isolation Clock gating Bus isolation Signal suppression/blanking FUNCTIONAL BLOCK DIAGRAM 1A 2A 1OE 2OE 1B 2B INDUSTRIAL TEMPERATURE RANGE 1 c 1999 Integrated Device Technology, Inc.
NOVEMBER 1999 DSC-5577/- IDTQS3306A HIGH-SPEED CMOS DUAL BUS SWITCH WITH LOW ENABLES www.
DataSheet4U.
com INDUSTRIAL TEMPERATURE RANGE PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Symbol VTERM(2) Description Supply Voltage to Ground DC Switch Voltage VS DC Input Voltage VIN AC Input Voltage (pulse width ≤20ns) DC Output Current Maximum Power Dissipation Storage Temperature (1) Unit V V V V mA W °C Max.
– 0.
5 to +7 – 0.
5 to +7 – 0.
5 to +7 -3 120 0.
5 – 65 to +150 1 OE 1A 1B 1 2 3 4 8 7 6 5 Vcc 2 OE 2A 2B VTERM(3) VTERM(3) VAC IOUT PMAX TSTG GND SOIC (S1) TOP VIEW NOTES: 1.
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IDTQS3306A HIGH-SPEED CMOS DUAL BUS SWITCH - Integrated Device Technology

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