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BUK9MHH-65PNN

NXP
Part Number BUK9MHH-65PNN
Manufacturer NXP
Description Dual TrenchPLUS FET Logic Level FET
Published Jun 29, 2010
Detailed Description www.DataSheet4U.com BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 02 — 19 May 2010 Objective data sheet 1. Pr...
Datasheet PDF File BUK9MHH-65PNN PDF File

BUK9MHH-65PNN
BUK9MHH-65PNN

Overview
www.
DataSheet4U.
com BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev.
02 — 19 May 2010 Objective data sheet 1.
Product profile 1.
1 General description Dual N-channel enhancement mode field-effect power transistor in SO20.
Device is manufactured using NXP High-Performance Architecture (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.
1.
2 Features and benefits „ Integrated current sensors „ Integrated temperature sensors 1.
3 Applications „ Lamp switching „ Motor drive systems „ Power distribution „ Solenoid drivers 1.
4 Quick reference data Table 1.
Symbol RDSon Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown voltage Conditions VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 15; see Figure 16 Tj = 25 °C; VGS = 5 V; see Figure 17 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ 9.
8 Max Unit 11.
5 mΩ FET1 and FET2 s...


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