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BUK654R8-40C

NXP
Part Number BUK654R8-40C
Manufacturer NXP
Description N-channel TrenchMOS intermediate level FET
Published Jun 29, 2010
Detailed Description www.DataSheet4U.com BUK654R8-40C N-channel TrenchMOS intermediate level FET Rev. 02 — 21 May 2010 Objective data sheet ...
Datasheet PDF File BUK654R8-40C PDF File

BUK654R8-40C
BUK654R8-40C

Overview
www.
DataSheet4U.
com BUK654R8-40C N-channel TrenchMOS intermediate level FET Rev.
02 — 21 May 2010 Objective data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 40 100 158 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 3.
84 4.
8 mΩ www.
DataSheet4U.
com NXP Semiconductors BUK654R8-40C N-channel TrenchMOS intermediate level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 179 mJ Table 1.
Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 100 A; Vsup ≤ 40 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 14; see Figure 15 Dynamic characteristics QGD 25.
9 nC [1] Continuous current is limited by package.
2.
Pinning information Table 2.
Pin 1 2 3 mb Pinning information Symbol Description G D S D gate Drain source mounting base; connected to drain mb D Simplified outline Graphic symbol G mbb076 S 1 2 3 SOT78 (TO-220AB) 3.
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