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STH260N6F6-2

ST Microelectronics
Part Number STH260N6F6-2
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Jun 29, 2010
Detailed Description www.DataSheet4U.com STH260N6F6-2 STP260N6F6 N-channel 60 V, 0.0016 Ω, 180 A TO-220, H2PAK-2 STripFET™ DeepGATE™ VI Powe...
Datasheet PDF File STH260N6F6-2 PDF File

STH260N6F6-2
STH260N6F6-2

Overview
www.
DataSheet4U.
com STH260N6F6-2 STP260N6F6 N-channel 60 V, 0.
0016 Ω, 180 A TO-220, H2PAK-2 STripFET™ DeepGATE™ VI Power MOSFET Preliminary data Features Type STH260N6F6-2 STP260N6F6 ■ ■ ■ ■ VDSS 60 V 60 V RDS(on) max < 0.
002 Ω < 0.
003 Ω ID 180 A 120 A 3 1 3 N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance 2 2 H2PAK-2 TO-220 1 Application ■ Switching applications Figure 1.
Internal schematic diagram Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.
$ ' 3 !-V Table 1.
Device summary Marking 260N6F6 260N6F6 Package H2PAK-2 TO-220 Packaging Tape and reel Tube Order code STH260N6F6-2 STP260N6F6 May 2010 Doc ID 17467 Rev 1 1/12 www.
st.
com 12 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
www.
DataSheet4U.
com Contents STH260N6F6-2, STP260N6F6 Contents 1 2 3 4 5 Electrical ratings .
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3 Electrical characteristics .
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4 Test circuits .
6 Package mechanical data .
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7 Revision history .
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11 2/12 Doc ID 17467 Rev 1 www.
DataSheet4U.
com STH260N6F6-2, STP260N6F6 Electrical ratings 1 Electrical ratings Table 2.
Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Value Parameter TO-220 Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C De...


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