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MWE6IC9080GNR1

Part Number	MWE6IC9080GNR1
Manufacturer	Freescale Semiconductor
Description	RF LDMOS Wideband Integrated Power Amplifiers
Published	Jun 29, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MWE6IC9080N www.DataSheet4U.com Rev. 0, 4/2010 RF LDMOS Wideba...
Datasheet	MWE6IC9080GNR1 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MWE6IC9080N www.
DataSheet4U.
com Rev.
0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz.
This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.
• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 29.
0 28.
8 28.
5 PAE (%) 49.
7 51.
6 52.
3 MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 865-960 MHz, 80 W CW, 28 V GSM, GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Stable into a 5:1 VSWR.
All Spurs Below --60 dBc @ 1 mW to 80 Watts CW Pout • Typical Pout @ 1 dB Compression Point ≃ 90 Watts CW • Typical GSM EDGE Per...

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MWE6IC9080GNR1 RF LDMOS Wideband Integrated Power Amplifiers - Freescale Semiconductor

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