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PBSS5630PA

NXP
Part Number PBSS5630PA
Manufacturer NXP
Description 6 A PNP low VCEsat (BISS) transistor
Published Jun 30, 2010
Detailed Description www.DataSheet4U.com PBSS5630PA 30 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 — 19 March 2010 Product data sheet 1...
Datasheet PDF File PBSS5630PA PDF File

PBSS5630PA
PBSS5630PA

Overview
www.
DataSheet4U.
com PBSS5630PA 30 V, 6 A PNP low VCEsat (BISS) transistor Rev.
01 — 19 March 2010 Product data sheet 1.
Product profile 1.
1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS4630PA.
1.
2 Features and benefits      Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package wi...


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