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MRF6V3090NBR5

Part Number	MRF6V3090NBR5
Manufacturer	Motorola Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 1, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field E...
Datasheet	MRF6V3090NBR5 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.
DataSheet4U.
com Rev.
0, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
Devices are suitable for use in broadcast applications.
• Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg.
, f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 22.
0 dB Drain Efficiency — 28.
5% ACPR @ 4 MHz Offset — --62.
0 dBc @ 4 kHz Bandwidth • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Input Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Excellent Thermal Stability • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel.
R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 470-860 MHz, 90 W, 50 V LATERAL N-CHANNEL SINGLE-ENDED BROADBAND RF POWER MOSFETs CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF6V3090NR1(NR5) CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF6V3090NBR1(NBR5) PARTS ARE SINGLE-ENDED Table 1.
Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value --0.
5, +110 --6.
0, +10 -- 65 to +150 150 225 Unit Vdc Vdc °C °C °C RFin/VGS RFout/VDS RFin/VGS RFout/VDS Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 76°C, 18 W CW, 50 Vdc, IDQ = 350 mA Case Temperature 80°C, 90 W CW, 50 Vdc, IDQ = 350 mA Symbol RθJC 0.
79 0.
82 Value (2,3) Unit °C/...

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