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2STW100

ST Microelectronics
Part Number 2STW100
Manufacturer ST Microelectronics
Description Power transistors
Published Jul 3, 2010
Detailed Description www.DataSheet4U.com 2STW100 2STW200 Complementary power Darlington transistors Preliminary data Features ■ ■ Compleme...
Datasheet PDF File 2STW100 PDF File

2STW100
2STW100

Overview
www.
DataSheet4U.
com 2STW100 2STW200 Complementary power Darlington transistors Preliminary data Features ■ ■ Complementary NPN - PNP transistors Monolithic Darlington configuration Applications ■ ■ ■ ■ Audio power amplifier DC-AC converter 2 3 1 Low voltage DC motor drive General purpose switching applications TO-247 Figure 1.
Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
Internal schematic diagrams Table 1.
Device summary Marking 2STW100 TO-247 2STW200 2STW200 Tube Package Packaging Order code 2STW100 March 2010 Doc ID 17235 Rev 1 1/7 www.
st.
com 7 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
www.
DataSheet4U.
com Absolute maximun ratings 2STW100, 2STW200 1 Absolute maximun ratings Table 2.
Absolute maximum ratings Value Symbol Parameter NPN PNP VCBO VCEO IC ICM IB IBM PTOT TSTG TJ Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc ≤ 25 °C Storage temperature Max.
operating junction temperature 2STW100 2STW200 80 80 25 40 6 10 130 -65 to 150 150 V V A A A A W °C °C Unit Note: For PNP type voltage and current values are negative Table 3.
Symbol RthJC Thermal data Parameter Thermal resistance junction-case max Value 0.
96 Unit °C/W 2/7 Doc ID 17235 Rev 1 www.
DataSheet4U.
com 2STW100, 2STW200 Electrical characteristics 2 Electrical characteristics Tcase = 25 °C; unless otherwise specified.
Table 4.
Symbol ICBO ICEV ICEO IEBO VCEO(sus) (1) Electrical characteristics Parameter Collector cut-off current (IE = 0) Collector cut-off current (VBE = - 0.
3 V) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test conditions VCE = 80 V VCE = 80 V VCE = 60 V VEB = 5 V 80 IB = 20 mA IB = 40 mA IB = 80 mA IB = 80 mA VCE = 3 V ...


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