DatasheetsPDF.com

2STX2360

Part Number	2STX2360
Manufacturer	ST Microelectronics
Description	Low voltage fast-switching PNP power transistor
Published	Jul 3, 2010
Detailed Description	www.DataSheet4U.com 2STX2360 Low voltage fast-switching PNP power transistor Features ■ ■ ■ Very low collector-emitter...
Datasheet	2STX2360 PDF File

Overview

www.
DataSheet4U.
com 2STX2360 Low voltage fast-switching PNP power transistor Features ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speed Applications ■ ■ ■ ■ Emergency lighting LED Voltage regulation Relay drive TO-92 Description The device is a PNP transistor manufactured using new “PB-HDC” (power bipolar high density current) technology.
The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary NPN type is the 2STX1360.
Figure 1.
Internal schematic diagram Table 1.
Device summary Marking X2360 Package TO-92 Packaging BAG Order code 2STX2360 March 2010 Doc ID 17226 Rev 1 1/9 www.
st.
com 9 www.
DataSheet4U.
com Absolute maximum ratings 2STX2360 1 Absolute maximum ratings Table 2.
Symbol VCBO VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Value -60 -60 -6 -3 -5 -0.
2 -0.
4 1 -65 to 150 150 Unit V V V A A A A W °C °C Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max.
operating junction temperature Table 3.
Symbol RthJA Thermal data Parameter Thermal resistance junction-ambient ___ _Max Value 125 Unit °C/W 2/9 Doc ID 17226 Rev 1 www.
DataSheet4U.
com 2STX2360 Electrical characteristics 2 Electrical characteristics TCASE = 25 °C; unless otherwise specified.
Table 4.
Symbol ICBO IEBO VBE(on) VCE(sat)(1) VBE(sat) (1) hFE(1) Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Base-emitter on voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Resistive load Delay time Rise time Storage time Fall time Transition frequency Test conditions VCB = - 60 V VEB = - 6 V VCE = - 2 V IC = - 2 A IC = - 3 A _ IC = - 2 A IC = - 1...

Similar Datasheet

2STX2360 Low voltage fast-switching PNP power transistor - ST Microelectronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)