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IXFK120N30T

IXYS
Part Number IXFK120N30T
Manufacturer IXYS
Description GigaMOS Power MOSFET
Published Jul 5, 2010
Detailed Description Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fa...
Datasheet PDF File IXFK120N30T PDF File

IXFK120N30T
IXFK120N30T

Overview
Advance Technical Information www.
DataSheet4U.
com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK120N30T IXFX120N30T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 300V 120A 24mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 120 330 30 2.
5 20 960 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
N/lb.
g g G = Gate S = Source (TAB) D = Drain T...


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