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IXFK320N17T2

IXYS
Part Number IXFK320N17T2
Manufacturer IXYS
Description GigaMOS TrenchT2 HiperFET Power MOSFET
Published Jul 5, 2010
Detailed Description Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mod...
Datasheet PDF File IXFK320N17T2 PDF File

IXFK320N17T2
IXFK320N17T2

Overview
Advance Technical Information www.
DataSheet4U.
com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK320N17T2 IXFX320N17T2 RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 320A 5.
2mΩ 150ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 170 170 ± 20 ± 30 320 160 800 100 5 1670 20 -55 .
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+175 175 -55 .
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+175 V V V V A A A ...


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