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IXFX360N15T2

IXYS
Part Number IXFX360N15T2
Manufacturer IXYS
Description Power MOSFET
Published Jul 5, 2010
Detailed Description GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N15T2...
Datasheet PDF File IXFX360N15T2 PDF File

IXFX360N15T2
IXFX360N15T2

Overview
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N15T2 IXFX360N15T2 VDSS = ID25 = RDS(on)  trr  150V 360A 4.
0m 150ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175°C 360 160 900 100 TBD 1670 20 -55 .
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+175 175 -55 .
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+175 A A A A J W V/ns C C C Maximum Lead Te...


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