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IXFN320N17T2

Part Number	IXFN320N17T2
Manufacturer	IXYS
Description	GigaMOS TrenchT2 HiperFET Power MOSFET
Published	Jul 5, 2010
Detailed Description	Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mod...
Datasheet	IXFN320N17T2 PDF File

Overview

Advance Technical Information www.
DataSheet4U.
com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN320N17T2 RDS(on) ≤ ≤ trr VDSS ID25 = = 170V 260A 5.
2mΩ 150ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 170 170 ±20 ±30 260 200 800 100 5 20 1070 -55 .
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+175 175 -55 .
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+175 V V V V A A...

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IXFN320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET - IXYS

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