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IXFX14N100

IXYS
Part Number IXFX14N100
Manufacturer IXYS
Description HiPerFET Power MOSFETs
Published Jul 5, 2010
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMO...
Datasheet PDF File IXFX14N100 PDF File

IXFX14N100
IXFX14N100

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFH/IXFT/IXFX14N100 1000 V 14 A 0.
75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.
70 W trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 14N100 15N100 14N100 15N100 14N100 15N100 Maximum Ratings 1000 1000 ±20 ±30 14 15 56 60 14 15 45 5 360 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A A A mJ V/ns W °C °C °C °C Nm/lb.
in.
g TO-247 AD (IXFH) (TAB) PLUS 247TM (IXFX) (TAB) G D TO-268 (D3) (IXFT) G S (TAB) 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque 300 1.
13/10 6 Features q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Applications q DC-DC converters q Battery chargers q Switched-mode and resonant-mode power supplies q DC choppers q AC motor control q Temperature and lighting controls Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) q High power surface mountable package q High power density 97535B (1/99) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
1000 2.
5 4.
5 ±100 TJ = 25°C TJ = 125°C 250 1 0.
75 0.
70 V V nA mA mA W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.
8 • VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 • ID25 14N100 15N100 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved 1-4...


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