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IXFK160N30T

IXYS
Part Number IXFK160N30T
Manufacturer IXYS
Description GigaMOS Power MOSFET
Published Jul 5, 2010
Detailed Description Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fa...
Datasheet PDF File IXFK160N30T PDF File

IXFK160N30T
IXFK160N30T

Overview
Advance Technical Information www.
DataSheet4U.
com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK160N30T IXFX160N30T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 300V 160A 19mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 160 440 40 3 20 1390 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
N/lb.
g g G = Gate S = Source (TAB) D = Drain TAB = Drain G D S (TAB) PLUS247 (IXFX) 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.
13/10 20.
.
120 /4.
5.
.
27 10 6 Features z z z z z International Standard Packages High Current Handling Capability Fast Intrins...


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