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M24L16161DA

Elite Semiconductor Memory Technology
Part Number M24L16161DA
Manufacturer Elite Semiconductor Memory Technology
Description 16-Mbit (1M x 16) Pseudo Static RAM
Published Jul 8, 2010
Detailed Description ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Me...
Datasheet PDF File M24L16161DA PDF File

M24L16161DA
M24L16161DA

Overview
ESMT Revision History : Revision 1.
0 (Jul.
4, 2007) - Original www.
DataSheet4U.
com M24L16161DA Elite Semiconductor Memory Technology Inc.
Publication Date : Jul.
2007 Revision : 1.
0 1/12 ESMT PSRAM Features • Wide voltage range: 2.
2V–3.
6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power ‧Offered in a 48-ball BGA Package • Operating Temperature: –40°C to +85°C www.
DataSheet4U.
com M24L16161DA 16-Mbit (1M x 16) Pseudo Static RAM HIGH or CE2 LOW), outputs are disabled ( OE HIGH), both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE1 LOW and CE2 HIGH and WE LOW).
To write to the device, take Chip Enable ( CE1 LOW and CE2 HIGH) and Write Enable ( WE ) input LOW.
If Byte Low Enable( BLE ) is LOW, then data from I/O pins (I/O0 through I/O7), is written into ...


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