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M24L816512SA

Elite Semiconductor Memory Technology
Part Number M24L816512SA
Manufacturer Elite Semiconductor Memory Technology
Description 8-Mbit (512K x 16) Pseudo Static RAM
Published Jul 8, 2010
Detailed Description ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typ...
Datasheet PDF File M24L816512SA PDF File

M24L816512SA
M24L816512SA

Overview
ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.
7V to 3.
6V • Typical active current: 2 mA @ f = 1 MHz • Typical active current: 11 mA @ f = fMAX • Low standby power • Automatic power-down when deselected www.
DataSheet4U.
com M24L816512SA 8-Mbit (512K x 16) Pseudo Static RAM Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable( CE LOW) and Write Enable ( WE ) input LOW.
If Byte Low Enable ( BLE ) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins(A0 through A18).
If Byte High Enable ( BHE ) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18).
Reading from the device is accomplished by taking Chip Enable ( CE LOW) and Output Enable ( OE ) LOW while forcing the Write Enable ( WE ) HIGH.
If Byte ...


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