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KM41C16000C

Samsung Semiconductor
Part Number KM41C16000C
Manufacturer Samsung Semiconductor
Description 16M x 1Bit CMOS Dynamic RAM
Published Jul 9, 2010
Detailed Description www.DataSheet4U.com KM41C16000C, KM41V16000C CMOS DRAM 16M x1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION Thi...
Datasheet PDF File KM41C16000C PDF File

KM41C16000C
KM41C16000C



Overview
www.
DataSheet4U.
com KM41C16000C, KM41V16000C CMOS DRAM 16M x1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs.
Fast Page Mode offers high speed random access of memory cells within the same row.
Power supply voltage (+5.
0V or +3.
3V), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 16Mx1 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
It may be used as main memory unit for high level computer and microcomputer.
FEATURES • Part Identification - KM41C16000C/C-L (5V, 4K Ref.
) - KM41V16000C/C-L (3.
3V, 4K Ref.
) • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast Parallel test mode capability • TTL(5V)/LVTTL(3.
3V) compatible inputs and outputs • Active Power Dissipation Unit : mW Speed -5 -6 3.
3V 324 288 5V 495 440 • Early Write Operation • JEDEC Standard pinout • Available in Plastic SOJ and TSOP(II) packages • Single +5V±10% power supply (5V product) • Single +3.
3V±0.
3V power supply (3.
3V product) • Refresh Cycles Part NO.
C16000C V16000C VCC 5V 3.
3V Refresh cycle 4K Refresh period Normal 64ms L-ver 128ms RAS CAS W FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss VBB Generator Data in Refresh Timer Refresh Control Row Decoder Sense Amps & I/O Buffer D • Performance Range Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tPC 35ns 40ns Remark 5V/3.
3V 5V/3.
3V A0-A11 A0-A11 Refresh Counter Row Address Buffer Col.
Address Buffer Memory Array 16,777,216 x1 Cells Data out Column Decoder Buffer Q SAMSUNG ELECTRONICS CO.
, LTD.
reserves the ...



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