DatasheetsPDF.com

IRFH5406PBF

Part Number	IRFH5406PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jul 11, 2010
Detailed Description	PD -96299 www.DataSheet4U.com IRFH5406PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 60 14.4 23 1.1 40 V mΩ n...
Datasheet	IRFH5406PBF PDF File

Overview

PD -96299 www.
DataSheet4U.
com IRFH5406PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 60 14.
4 23 1.
1 40 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Low RDSon (< 14.
4 mΩ) Low Thermal Resistance to PCB (< 2.
7°C/W) 100% Rg tested Low Profile (<0.
9 mm) results in ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5406TRPBF IRFH5406TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 400 Tape and Reel Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max.
60 ± 20 11 9 40 25 160 3.
6 46 0.
029 -55 to + 150 Units V A g g c W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes through are on page 8 www.
irf.
com 1 04/12/10 IRFH5406PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltag...

Similar Datasheet

IRFH5406PBF HEXFET Power MOSFET - International Rectifier

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)