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BFU610F

NXP
Part Number BFU610F
Manufacturer NXP
Description NPN Wideband Silicon Germanium RF Transistor
Published Jul 11, 2010
Detailed Description BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile CAUTION 1....
Datasheet PDF File BFU610F PDF File

BFU610F
BFU610F

Overview
BFU610F NPN wideband silicon RF transistor Rev.
2 — 11 January 2011 Product data sheet 1.
Product profile CAUTION 1.
1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.
2 Features and benefits „ Low noise high gain microwave transistor „ Noise figure (NF) = 1.
7 dB at 5.
8 GHz „ High associated gain 13.
5 dB at 5.
8 GHz „ 40 GHz fT silicon technology 1.
3 Applications „ Low ...


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