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PSMN7R0-60YS

NXP Semiconductors
Part Number PSMN7R0-60YS
Manufacturer NXP Semiconductors
Description N-channel LFPAK 60V 6.4mOhm standard level MOSFET
Published Jul 11, 2010
Detailed Description www.DataSheet4U.com PSMN7R0-60YS N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET Rev. 02 — 30 March 2010 Product data...
Datasheet PDF File PSMN7R0-60YS PDF File

PSMN7R0-60YS
PSMN7R0-60YS

Overview
www.
DataSheet4U.
com PSMN7R0-60YS N-channel LFPAK 60 V 6.
4 mΩ standard level MOSFET Rev.
02 — 30 March 2010 Product data sheet 1.
Product profile 1.
1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C.
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.
2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.
3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.
4 Quick reference data Table 1.
VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 89.
1 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped VGS = 10 V; ID = 60 A; VDS = 30 V; see Figure 14 and 15 Typ Max 60 89 117 175 143 Unit V A W °C mJ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 9.
6 45 nC nC www.
DataSheet4U.
com NXP Semiconductors PSMN7R0-60YS N-channel LFPAK 60 V 6.
4 mΩ standard level MOSFET Quick reference …continued Conditions VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Min Typ 4.
95 Max 10.
2 6.
4 Unit mΩ mΩ Table 1.
Symbol Parameter Static characteristics RDSon drain-source on-state resistance 2.
Pinning information Table 2.
Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 4 SOT669 (LFPAK) 3.
Ordering information Table 3.
Ordering info...


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