DatasheetsPDF.com

90N20DPBF

International Rectifier
Part Number 90N20DPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Jul 13, 2010
Detailed Description SMPS MOSFET PD - 95664 IRFP90N20DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free ...
Datasheet PDF File 90N20DPBF PDF File

90N20DPBF
90N20DPBF

Overview
SMPS MOSFET PD - 95664 IRFP90N20DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 200V RDS(on) max 0.
023Ω ID 94Ao Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Max.
94o 66 380 580 3.
8 ± 30 6.
7 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Typ.
––– 0.
24 ––– Max.
0.
26 ––– 40 Units °C/W Notes  through o are on page 8 www.
irf.
com 1 7/30/04 IRFP90N20DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage 200 ––– ––– 3.
0 ––– ––– ––– ––– ––– ––– V 0.
24 ––– V/°C ––– 0.
023 Ω ––– 5.
0 V ––– 25 µA ––– 250 ––– 100 nA ––– -100 VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 56A „ VDS = VGS, ID = 250µA VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 150°C VGS = 30V VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
gfs Forward Transconductance 39 ––– ––– Qg Total Gate Charge ––– 180 270 Qgs Gate-to-Source Cha...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)