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TK80D08K3

Toshiba Semiconductor
Part Number TK80D08K3
Manufacturer Toshiba Semiconductor
Description Switching Regulator Applications
Published Jul 16, 2010
Detailed Description TK80D08K3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80D08K3 Switching R...
Datasheet PDF File TK80D08K3 PDF File

TK80D08K3
TK80D08K3

Overview
TK80D08K3 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80D08K3 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 3.
6 mΩ (typ.
) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 10.
0±0.
3 9.
5±0.
2 A 0.
6±0.
1 Ф3.
65±0.
2 Unit: mm 3.
2 2.
8 1.
1±0.
15 2.
8Max.
9.
0 15.
0±0.
3 0.
75±0.
25 12.
8±0.
5 +0.
25 0.
57 -0.
10 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ±20 80 320 100 443 80 10 150 −55 to 150 Unit V V V A W mJ A mJ °C °C 0.
62±0.
15 Ф0.
2 M A 1 2 3 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range ...


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