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TPC8A02-H

Toshiba Semiconductor
Part Number TPC8A02-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8A02-H www.DataSheet4U.com ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS...
Datasheet PDF File TPC8A02-H PDF File

TPC8A02-H
TPC8A02-H

Overview
TPC8A02-H www.
DataSheet4U.
com ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ) TPC8A02-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • • Built-in schottky barrier diode Low forward voltage: VDSF = 0.
6V(Max.
) High-speed switching.
Small gate charge.
: QSW ＝ 11 nC(Typ.
) Low drain-source ON-resistance: RDS (ON) = 4.
3 mΩ (typ.
) High forward transfer admittance: |Yfs| = 40 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic D...


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