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TPC8117

Toshiba Semiconductor
Part Number TPC8117
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 16, 2010
Detailed Description TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8117 Lithium Ion Battery Applications No...
Datasheet PDF File TPC8117 PDF File

TPC8117
TPC8117

Overview
TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8117 Lithium Ion Battery Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON) = 3.
0 mΩ (typ.
) • High forward transfer admittance : |Yfs| = 54 S (typ.
) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power di...


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