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IRF6718L2TR1PBF

Part Number	IRF6718L2TR1PBF
Manufacturer	International Rectifier
Description	DirectFET Power MOSFET
Published	Jul 17, 2010
Detailed Description	PD - 97395E IRF6718L2TRPbF l RoHS Compliant Containing No Lead and Bromide l Dual Sided Cooling Compatible l Ultra...
Datasheet	IRF6718L2TR1PBF PDF File

Overview

PD - 97395E IRF6718L2TRPbF l RoHS Compliant Containing No Lead and Bromide l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Very Low RDS(ON) for Reduced Conduction Losses l Optimized for Active O-Ring / Efuse Applications l Compatible with existing Surface Mount Techniques IRF6718L2TR1PbF DirectFET® Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.
50mΩ@10V 1.
0mΩ@4.
5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 64nC 20nC 9.
4nC 67nC 50nC 1.
9V Applicable DirectFET Outline and Substrate Outline S1 S2 SB M2 M4 L6 DirectFET® ISOMETRIC L4 L6 L8 Description The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, ...

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IRF6718L2TR1PBF DirectFET Power MOSFET - International Rectifier

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