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SSM5G04TU

Toshiba Semiconductor
Part Number SSM5G04TU
Manufacturer Toshiba Semiconductor
Description DC-DC Converter
Published Jul 21, 2010
Detailed Description SSM5G04TU www.DataSheet4U.com Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU D...
Datasheet PDF File SSM5G04TU PDF File

SSM5G04TU
SSM5G04TU

Overview
SSM5G04TU www.
DataSheet4U.
com Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter • • Combined Pch MOSFET and Schottky Diode into one Package.
Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating −12 ±12 −1.
0 −2.
0 0.
5 0.
8 150 Unit V V A Drain power dissipation Channel temperature W °C UFV DIODE Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repe...


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