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SSM6K203FE

Toshiba Semiconductor
Part Number SSM6K203FE
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE ○ High-Speed Switching Applications ...
Datasheet PDF File SSM6K203FE PDF File

SSM6K203FE
SSM6K203FE

Overview
SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.
5 V drive • Low ON-resistance: Ron = 153 mΩ (max) (@VGS = 1.
5V) Ron = 106 mΩ (max) (@VGS = 1.
8V) Ron = 76 mΩ (max) (@VGS = 2.
5V) Ron = 61 mΩ (max) (@VGS = 4.
0V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 2.
8 A 5.
6 Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/ voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.
4 mm × 25.
4 mm × 1.
6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source ES6 JEDEC ― JEITA TOSHIBA ― 2-2N1A Weight: 3 mg (typ.
) Characteristic Drain–source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Switching time Turn-on time Turn-off time Drain–source forward voltage Note 2: Pulse test Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss Qg Qgs Qgd ton toff VDSF Test Condition Min Typ.
Max Unit ID =...


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