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SSM6K211FE

Toshiba Semiconductor
Part Number SSM6K211FE
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ) SSM6K211FE ○ High-Speed Switching Applic...
Datasheet PDF File SSM6K211FE PDF File

SSM6K211FE
SSM6K211FE

Overview
SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ) SSM6K211FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.
5-V drive • Low ON-resistance: Ron = 118 mΩ (max) (@VGS = 1.
5 V) Ron = 82 mΩ (max) (@VGS = 1.
8 V) Ron = 59 mΩ (max) (@VGS = 2.
5 V) Ron = 47 mΩ (max) (@VGS = 4.
5 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 3.
2 A 6.
4 Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C ES6 1,2, 5, 6: Drain 3: Gate 4: Source Storage temperature Tstg −55 to 150 °C JEDEC ― Note:Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the JEITA TOSHIBA ― 2-2N1J reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute Weight: 3 mg (typ.
) maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm2) Marking Equivalent Circuit (top view) 654 654 NQ 123 123 Start of commercial production 2008-10 1 2014-03-01 SSM6K211FE Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching time Turn-on time Turn-off time Drain-source forward voltage Note 2: Pulse ...


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