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SSM6K22FE

Toshiba Semiconductor
Part Number SSM6K22FE
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM6K22FE High Current Switching Applicat...
Datasheet PDF File SSM6K22FE PDF File

SSM6K22FE
SSM6K22FE

Overview
SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM6K22FE High Current Switching Applications DC-DC Converter Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: RDS(ON) = 170 mΩ (max) (@VGS = 4.
0 V) RDS(ON) = 230 mΩ (max) (@VGS = 2.
5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ±12 V Drain current DC ID Pulse IDP 1.
4 A 5.
6 1,2,5,6 : Drain 3 : Gate 4 : Source Power dissipation Channel temperature Storage temperature range PD 500 mW (Note 1) Tch 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA 2-2N1A No...


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