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SSM6L09FU

Part Number	SSM6L09FU
Manufacturer	Toshiba Semiconductor
Description	Silicon N/P-Channel MOSFET
Published	Jul 21, 2010
Detailed Description	SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI) SSM6L09FU Power Management Switch Hig...
Datasheet	SSM6L09FU PDF File

Overview

SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI) SSM6L09FU Power Management Switch High Speed Switching Applications Unit: mm • Small package • Low on-resistance Q1: RDS(ON) = 0.
7 Ω (max) (@VGS = 10 V) Q2: RDS(ON) = 2.
7 Ω (max) (@VGS = −10 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit 30 V ±20 V 400 mA 800 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit −30 V ±20 V −200 mA −400 JEDEC ― JEITA ― TOSHIBA 2-2J1C Weight: 6.
8 mg (typ.
) Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C) Characteristics Symbol Rating Unit Power dissipation Channel temperature Storage temperature range PD (Note 1) 300 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 0.
32 mm2 × 6) 0.
4 mm 0.
8 mm Start of commercial production 2001-02 1 2014-03-01 SSM6L09FU Marking (top view) 6 5 4 K5 1 2 3 Equivalent Circuit 6 5 4 Q1 Q2 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity.
Operators should wear anti-...

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SSM6L09FU Silicon N/P-Channel MOSFET - Toshiba Semiconductor

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