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SSM6L16FE

Part Number	SSM6L16FE
Manufacturer	Toshiba Semiconductor
Description	Silicon Dual-Channel MOSFET
Published	Jul 21, 2010
Detailed Description	SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(π-MOSVI) SSM6L16FE High Speed Switching Applic...
Datasheet	SSM6L16FE PDF File

Overview

SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(π-MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance Q1: RDS(ON) = 4 Ω (max) (@VGS = 2.
5 V) Q2: RDS(ON) = 12 Ω (max) (@VGS = −2.
5 V) Unit: mm Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit 20 V ±10 V 100 mA 200 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit -20 V ±10 V -100 mA -200 Absolute Maximum Ratings (Q1, Q2 ...

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SSM6L16FE Silicon Dual-Channel MOSFET - Toshiba Semiconductor

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