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SSM6P15FE

Toshiba Semiconductor
Part Number SSM6P15FE
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Jul 21, 2010
Detailed Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FE High Speed Switching Applications Analog Switch App...
Datasheet PDF File SSM6P15FE PDF File

SSM6P15FE
SSM6P15FE

Overview
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FE High Speed Switching Applications Analog Switch Applications SSM6P15FE • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.
5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID −100 mA IDP −200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.
4 mm × 25.
4 mm × 1.
6 mm t, Cu Pad: 0.
135 mm2 × 6) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2N1D Weight: 0.
003g(typ.
) 0.
3 mm 0.
45 mm Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 DQ Q1 Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity.
Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production 2002-03 © 2022 1 Toshiba Electronic Devices & Storage Corporation 2022-02-24 SSM6P15FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Char...


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