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SSM6P28TU

Toshiba Semiconductor
Part Number SSM6P28TU
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM6P28TU www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P28TU High-Speed Switching...
Datasheet PDF File SSM6P28TU PDF File

SSM6P28TU
SSM6P28TU


Overview
SSM6P28TU www.
DataSheet4U.
com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P28TU High-Speed Switching Applications Power Management Switch Applications • • • 1.
8V drive P-ch 2-in-1 Low ON-resistance: Ron = 460 mΩ (max) (@VGS = −1.
8 V) 0.
65 0.
65 2.
0±0.
1 1.
3±0.
1 2.
1±0.
1 1.
7±0.
1 Unit: mm Ron = 306 mΩ (max) (@VGS = −2.
5 V) Ron = 234 mΩ (max) (@VGS = −4.
0 V) 1 2 3 6 5 4 Absolute Maximum Ratings (Ta = 25°C) (Q1 , Q2 Common) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±8 −0.
8 −1.
6 500 150 −55 to 150 Unit V V A mW °C °C 0.
7±0.
05 1.
Source1 2.
Gate1 3.
Drain2 4.
Source2 5.
Gate2 6.
Drain1 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (total dissipation) 2 (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm ) UFM JEDEC JEITA TOSHIBA Weight: 7 mg (typ.
) ― ― 2-2T1B Electrical Characteristics (Ta = 25°C) (Q1 , Q2 Common) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss ton toff VDSF Test Conditions ID = − 1 mA, VGS = 0 ID = − 1 mA, VGS = +...


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