DatasheetsPDF.com

RB751CS-40

Rohm
Part Number RB751CS-40
Manufacturer Rohm
Description Schottky barrier diode
Published Jul 22, 2010
Detailed Description Data Sheet Schottky barrier diode RB751CS-40 Applications Low current rectification Dimensions (Unit : mm) Featu...
Datasheet PDF File RB751CS-40 PDF File

RB751CS-40
RB751CS-40


Overview
Data Sheet Schottky barrier diode RB751CS-40 Applications Low current rectification Dimensions (Unit : mm) Features 1) Ultra Small mold type(VMN2) 2) Low VF 3) High reliability 0 .
6±0.
05 0.
16±0.
05 Land size figure (Unit : mm) 0.
9±0.
05 1.
0±0.
05 Structure Silicon epitaxial planer 0.
156 0.
35±0.
1 0.
37±0.
03 ROHM : VMN2 dot (year week factory)+day Structure Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak(60Hz/1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 40 30 30 200 125 40 to 125 Unit V V mA mA °C °C Electrical characteristic (Ta=25°C) Parameter Symbol Min.
Typ.
Max.
Forward voltage Reverse current Capacitance between terminals VF - 0.
37 IR - 0.
5 Ct - 2 - Unit Conditions V IF=1mA μA VR=30V pF VR=1V , f=1MHz www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights reserved.
1/3 2011.
05 - Rev.
A RB751CS-40 Electrical characteristic curves   FORWARD CURRENT:IF(mA) 100 10 Ta=75C Ta=125C 1 0.
1 Ta=25C Ta=-25C 0.
01 0.
001 0 100 200 300 400 500 600 700 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 800 0REVERSE CURRENT:IR(nA) 100000 10000 1000 100 10 Ta=125C Ta=75C Ta=25C Ta=-25C 1 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) Data Sheet 10 f=1MHz 1 0.
1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 FORWARD VOLTAGE:VF(mV) 330 Ta=25C 320 IF=1mA n=30pcs 310 300 290 AVE:304.
2mV 280 VF DISPERSION MAP REVERSE CURRENT:IR(nA) 1000 900 800 700 600 500 400 300 200 100 0 Ta=25C VR=30V n=30pcs AVE:111.
0nA IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 9 Ta=25C f=1MHz 8 VR=0V 7 n=10pcs 6 5 4 3 2 1 AVE:1.
81pF 0 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 20 15 10 5 0 10 8 6 4 2 0 1 Ifsm 1cyc 8.
3ms AVE:3.
40A IFSM DISRESION MAP REVERSE RECOV...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)