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RF1001T2

Rohm
Part Number RF1001T2
Manufacturer Rohm
Description Fast Recovery Diode
Published Jul 22, 2010
Detailed Description www.DataSheet4U.com Fast recovery diodes RF1001T2D  Applications General rectification  Dimensions (Unit : mm) 4.5±0....
Datasheet PDF File RF1001T2 PDF File

RF1001T2
RF1001T2

Overview
www.
DataSheet4U.
com Fast recovery diodes RF1001T2D  Applications General rectification  Dimensions (Unit : mm) 4.
5±0.
3 　　　 0.
1  Structure 1.
2 1.
3 5.
0±0.
2  Features 1) Cathode common type.
(TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 10.
0±0.
3 　　　 0.
1 2.
8±0.
2 　　　 0.
1 (1) (2) (3) 8.
0±0.
2 12.
0±0.
2 15.
0±0.
4 　 0.
2 13.
5MIN 8.
0 ①  Construction Silicon epitaxial planar 0.
8 (1) (2) (3) 0.
7±0.
1 0.
05 2.
6±0.
5 ROHM : ＴO220FN ① Manufacture Date  Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) Junction temperature Storage temoerature Symbol VRM VR Io IFSM Limits 200 200 10 80 150 -55 to +150 Unit V V A A Tj Tstg (*1)Business frequencies, Rating of R-load, Tc=126 C.
1/2 Io per diode  Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance C C Symbol VF IR Min.
- Typ.
0.
87 0.
01 15 - Max.
0.
93 10 30 2.
5 Unit V μA ns  C/W IF=5A VR=200V Conditions trr  j-c IF=0.
5A,IR=1A,Irr=0.
25*IR JUNCTION TO CASE www.
rohm.
com ©2010 ROHM Co.
, Ltd.
All rights reserved.
1/3 2010.
02 - Rev.
D RF1001T2D Electrical characteristics curves 　 www.
DataSheet4U.
com Data Sheet 10 Ta=150 C 1 Ta=125 C 0.
1 Ta=75 C Ta=-25 C Ta=25 C 10000 Ta=150 C Ta=125 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHz 1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=75 C 100 Ta=25 C 10 Ta=-25 C 1 100 0.
01 10 0.
001 0 100 200 300 400 500 600 700 800 900 100 110 120 0 0 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.
1 0 50 100 150 200 REVERSE VOLTAGE:V R(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS 25 30 890 Ta=25 C IF=5A n=30pcs 100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 AVE:857.
4mV 10 0 VF DISPERSION MAP IR DISPERSION MAP AVE:10.
7nA Ta=25 C VR=200V n=30pcs 200 195 CAPACITANCE BETWEEN TERMINALS:Ct(pF)...


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