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SSM3J114TU

Toshiba Semiconductor
Part Number SSM3J114TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 22, 2010
Detailed Description SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU ○ High-Speed Switching Applications ...
Datasheet PDF File SSM3J114TU PDF File

SSM3J114TU
SSM3J114TU

Overview
SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm 0.
3-+00.
.
015 • 1.
5 V drive • Low on-resistance Ron = 526 mΩ (max) (@ VGS = -1.
5 V) Ron = 321 mΩ (max) (@ VGS = -1.
8 V) Ron = 199 mΩ (max) (@ VGS = -2.
5 V) Ron = 149 mΩ (max) (@ VGS = -4.
0 V) 2.
0±0.
1 0.
65±0.
05 2.
1±0.
1 1.
7±0.
1 1 2 3 0.
166±0.
05 Absolute Maximum Ratings (Ta = 25°C) 0.
7±0.
05 Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID Pulse IDP -1.
8 A -3.
6 1.
Gate 2.
Source 3.
Drain Drain power dissipation Channel temperature Storage temperature PD (Note 1) 800 mW PD (Note 2) 500 UFM Tch 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of TOSHIBA 2-2U1A high temperature/current/voltage and the significant change in temperature, etc.
) may cause thi...


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