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SSM3J317T

Part Number	SSM3J317T
Manufacturer	Toshiba Semiconductor
Description	Power Management Switch Applications High-Speed Switching Applications
Published	Jul 22, 2010
Detailed Description	SSM3J317T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management S...
Datasheet	SSM3J317T PDF File

Overview

SSM3J317T www.
DataSheet4U.
com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications • • 1.
8-V drive Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.
8 V) : Ron = 144 mΩ (max) (@VGS = -2.
8 V) : Ron = 107 mΩ (max) (@VGS = -4.
5 V) 2.
9±0.
2 0.
95 １２３ Unit: mm +0.
2 2.
8-0.
3 +0.
2 1.
6-0.
1 0.
4±0.
1 0.
15 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse ID Symbol VDSS VGSS (Note 1) IDP (Note 1) PD (Note 2) t = 5s Tch Tstg Rating -20 ±8 -3.
6 -7.
2 700 1400 150 −55 to 150 Unit V ...

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SSM3J317T Power Management Switch Applications High-Speed Switching Applications - Toshiba Semiconductor

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