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RJK0206DPA

Part Number	RJK0206DPA
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Jul 23, 2010
Detailed Description	Preliminary www.DataSheet4U.com Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G...
Datasheet	RJK0206DPA PDF File

Overview

Preliminary www.
DataSheet4U.
com Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.
2.
00 Apr 27, 2010 Features High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.
5 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free      Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25C, Rg  50  3.
Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 25 ±20 ...

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RJK0206DPA Silicon N Channel Power MOS FET - Renesas Technology

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