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RJK03E4DPA

Part Number	RJK03E4DPA
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Jul 23, 2010
Detailed Description	Preliminary www.DataSheet4U.com Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G...
Datasheet	RJK03E4DPA PDF File

Overview

Preliminary www.
DataSheet4U.
com Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev.
2.
10 May 20, 2010 Features High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.
8 m typ.
(at VGS = 8 V)  Pb-free  Halogen-free      Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25C, Rg  50  3.
Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±12 45 180 45 17 28.
9 40 3.
13 150 –55 to +150 Unit V V A A A A mJ W C/W C C REJ03G1928-0210 Rev.
2.
10 May 20, 2010 Page 1 of 6 RJK03E4DPA Preliminary www.
DataSheet4U.
com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4.
Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.
2 — — — — — — — — — — — — — — — — Typ — — — — 2.
8 3.
2 115 4300 500 330 1.
7 33 11 10 18 8 66 17 0.
39 29 Max — ±0.
1 1 2.
5 3.
4 4.
0 — 6020 — — 3.
4 — — — — — — — — — Unit ...

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RJK03E4DPA Silicon N Channel Power MOS FET - Renesas Technology

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