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RJK03E5DPA

Part Number	RJK03E5DPA
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Jul 23, 2010
Detailed Description	Preliminary www.DataSheet4U.com Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G...
Datasheet	RJK03E5DPA PDF File

Overview

Preliminary www.
DataSheet4U.
com Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210 Power Switching Rev.
2.
10 May 20, 2010 Features High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.
2 m typ.
(at VGS = 8 V)  Pb-free  Halogen-free      Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Aval...

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RJK03E5DPA Silicon N Channel Power MOS FET - Renesas Technology

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