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RJK0456DPB

Renesas Technology
Part Number RJK0456DPB
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Jul 23, 2010
Detailed Description RJK0456DPB 40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low dr...
Datasheet PDF File RJK0456DPB PDF File

RJK0456DPB
RJK0456DPB

Overview
RJK0456DPB 40V, 50A, 3.
2m max.
Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 2.
6 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 Preliminary Datasheet R07DS1051EJ0300 (Previous: REJ03G1879-0200) Rev.
3.
00 Apr 09, 2013 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 Channel to Case Thermal Resistance ch-C Channel temperature Tch Storage temperature Tstg Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at L=10uH, Tch = 25C, Rg  50  3.
Tc = 25C Ratings 40 20 50 200 50 50 20 65 1.
92 150 –55 to +150 (Ta = 25°C) Unit V...


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